Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Research output: Contribution to conference › Poster › peer-review

2016
Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology
Bezhenova, V. & Michalowska-Forsyth, A. M., 28 Jul 2016, 2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC). IEEE Publications, p. 366-369 4 p.
Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Research output