Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Varvara Bezhenova
, Alicja Malgorzata Michalowska-Forsyth

Institute of Electronics (4390)

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

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2016
Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology
Bezhenova, V. & Michalowska-Forsyth, A. M., 28 Jul 2016, p. 366-369. 4 p.
Research output: Contribution to conference › Poster › peer-review