Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Varvara Bezhenova; Alicja Malgorzata Michalowska-Forsyth

doi:10.1109/APEMC.2016.7522739

Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Varvara Bezhenova
, Alicja Malgorzata Michalowska-Forsyth

Institute of Electronics (4390)

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Abstract

Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

Original language	English
Title of host publication	2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC)
Publisher	IEEE Publications
Pages	366-369
Number of pages	4
ISBN (Electronic)	978-1-4673-9494-9
ISBN (Print)	978-1-4673-8310-3
DOIs	https://doi.org/10.1109/APEMC.2016.7522739
Publication status	Published - 28 Jul 2016

Keywords

Logic gates
MOS devices
Transistors
CMOS integrated circuits
ionizing dose effects
RINCE
radiation hard design

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Radiation

Fields of Expertise

Information, Communication & Computing

Access to Document

10.1109/APEMC.2016.7522739

1 Poster

Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology
Bezhenova, V. & Michalowska-Forsyth, A. M., 28 Jul 2016, p. 366-369. 4 p.
Research output: Contribution to conference › Poster › peer-review

Cite this

@inproceedings{555327b35a8c46d29c680c4a70ebcdcd,

title = "Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology",

abstract = "Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.",

keywords = "Logic gates, MOS devices, Transistors, CMOS integrated circuits, ionizing dose effects, RINCE, radiation hard design",

author = "Varvara Bezhenova and Michalowska-Forsyth, \{Alicja Malgorzata\}",

year = "2016",

month = jul,

day = "28",

doi = "10.1109/APEMC.2016.7522739",

language = "English",

isbn = "978-1-4673-8310-3",

pages = "366--369",

booktitle = "2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC)",

publisher = "IEEE Publications",

}

TY - GEN

T1 - Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

AU - Bezhenova, Varvara

AU - Michalowska-Forsyth, Alicja Malgorzata

PY - 2016/7/28

Y1 - 2016/7/28

N2 - Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

AB - Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

KW - Logic gates

KW - MOS devices

KW - Transistors

KW - CMOS integrated circuits

KW - ionizing dose effects

KW - RINCE

KW - radiation hard design

U2 - 10.1109/APEMC.2016.7522739

DO - 10.1109/APEMC.2016.7522739

M3 - Conference paper

SN - 978-1-4673-8310-3

SP - 366

EP - 369

BT - 2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC)

PB - IEEE Publications

ER -

Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Abstract

Keywords

ASJC Scopus subject areas

Fields of Expertise

Access to Document

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Research output

Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Cite this