TID characterization at low and medium energy X-rays of 0.18 µm analog integrated test chip MiAMoRE

We have developed a MiAMoRE test chip in a 0.18 µm CMOS process, containing a selection of devices typically used in analog integrated circuit design: MOS transistors of different types and polarities, bipolar transistors, resistors, capacitors, diodes and field oxide transistors. Many of these devices were designed with non-standard layouts with the objective to improve the performance against TID effects. In total there are over a hundred devices, therefore their full characterization was the primary challenge in the test concept. The test chip has been exposed at two different sources: low and medium energy X-rays including characterization at different dose steps. After showing the test results of selected devices we discuss the details on TID calculation and reporting, in the attempt to make a correct comparison of the results from two different facilities.