| Original language | English |
|---|---|
| Title of host publication | 2019 Austrochip Workshop on Microelectronics |
| Subtitle of host publication | Austrochip 2019 |
| Place of Publication | Vienna |
| Pages | 55 |
| Number of pages | 58 |
| ISBN (Electronic) | 978-1-7281-1953-3 |
| Publication status | Published - 24 Oct 2019 |
| Event | 27th Austrochip Workshop on Microelectronics: Austrochip 2019 - FH Technikum Wien, Wien, Austria Duration: 24 Oct 2019 → 24 Oct 2019 Conference number: 27 https://embsys.technikum-wien.at/austrochip2019/ https://embsys.technikum-wien.at/austrochip2019/program/index.htm |
Workshop
| Workshop | 27th Austrochip Workshop on Microelectronics |
|---|---|
| Abbreviated title | Austrochip |
| Country/Territory | Austria |
| City | Wien |
| Period | 24/10/19 → 24/10/19 |
| Internet address |
Keywords
- Nonvolatile Memories
- Radiation Hardness
- Total Ionizing Dose
Research output
- 1 Paper
-
Program time effects on Total ionizing Dose tolerance of Sidewall Spacer Memory Bit Cell
Vincenzi, T., Schatzberger, G. & Michalowska-Forsyth, A. M., 24 Oct 2019.Research output: Contribution to conference › Paper › peer-review
Cite this
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS