Nanoscale CMOS Ring Oscillators for Statistical Characterization of Random Telegraph Noise

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Abstract

The Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale CMOS technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used two different types of ROSCs to study the temporal and spectral characteristics of the RTN. With this work, we analyse the suitability of the two types of ROSC for on chip statistical analysis of the RTN amplitude strength and its frequency characteristics. Already the preliminary results, without complete statistical coverage show f/fmax variations of up to 7.18% which maximize RTN observability. Further, the observed broad variations in normalized phase noise under varying power supply levels in the range of 0.5 V to 1 V indicate that also the bias dependence of RTN centers can be investigated using the ROSC technique.

Original languageEnglish
Title of host publication2023 Austrochip Workshop on Microelectronics, Austrochip 2023 - Proceedings
PublisherIEEE
Pages27-30
Number of pages4
ISBN (Electronic)9798350357851
DOIs
Publication statusPublished - 2023
Event2023 Austrochip Workshop on Microelectronics: Austrochip 2023 - Graz, Austria
Duration: 20 Sept 202321 Sept 2023

Workshop

Workshop2023 Austrochip Workshop on Microelectronics
Abbreviated titleAustrochip 2023
Country/TerritoryAustria
CityGraz
Period20/09/2321/09/23

Keywords

  • Jitter
  • Oxide-trap
  • Random Telegraph Noise
  • Ring Oscillator
  • RTN

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Hardware and Architecture
  • Instrumentation

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