Modeling of annular gate MOS transistors

Research output: Contribution to conference › Poster › peer-review

Original language	English
Publication status	Published - Sept 2018
Event	18th Conference on Radiation Effects on Components and Systems : RADECS 2018 - Gothenburg, Sweden Duration: 16 Sept 2018 → 21 Sept 2018 http://www.radecs2018.org/

Conference	18th Conference on Radiation Effects on Components and Systems
Abbreviated title	RADECS 2018
Country/Territory	Sweden
City	Gothenburg
Period	16/09/18 → 21/09/18
Internet address	http://www.radecs2018.org/

ASJC Scopus subject areas

Modeling of annular gate MOS transistors
Bezhenova, V. (Speaker) & Michalowska-Forsyth, A. M. (Contributor)
19 Sept 2018
Activity: Talk or presentation › Poster presentation › Science to science
18th Conference on Radiation Effects on Components and Systems
Bezhenova, V. (Participant) & Michalowska-Forsyth, A. M. (Participant)
16 Sept 2018 → 21 Sept 2018
Activity: Participation in or organisation of › Conference or symposium (Participation in/Organisation of)

Modeling of annular gate MOS transistor
Bezhenova, V. & Michalowska-Forsyth, A. M., 2021, 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS). Gothenburg, 4 p.
Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review
Modeling of annular gate MOS transistors
Bezhenova, V. & Michalowska-Forsyth, A. M., Sept 2018.
Research output: Contribution to conference › Paper › peer-review

@conference{7a74cb05e70d4b4e8f04ea3349257a7a,

title = "Modeling of annular gate MOS transistors",

author = "Varvara Bezhenova and Michalowska-Forsyth, \{Alicja Malgorzata\}",

year = "2018",

month = sep,

language = "English",

note = "18th Conference on Radiation Effects on Components and Systems : RADECS 2018, RADECS 2018 ; Conference date: 16-09-2018 Through 21-09-2018",

url = "http://www.radecs2018.org/",

}