Hot electron effects in AlGaN/GaN HEMTs during hard-switching events

Andrea Minetto; Nicola Modolo; Matteo Meneghini; Enrico Zanoni; Luca Sayadi; Sébastien Sicre; Bernd Deutschmann; Oliver Häberlen

doi:10.1016/j.microrel.2021.114208

Hot electron effects in AlGaN/GaN HEMTs during hard-switching events

Andrea Minetto^*
, Nicola Modolo
, Matteo Meneghini
, Enrico Zanoni
, Luca Sayadi
, Sébastien Sicre
, Bernd Deutschmann
, Oliver Häberlen

^*Corresponding author for this work

Institute of Electronics (4390)

Research output: Contribution to journal › Article › peer-review

Abstract

This work contains an investigation of hot-electrons effects in GaN transistors during a hard-switching event by means of wafer-level measurements and TCAD mixed-mode hydrodynamic simulations. The latter reveals the presence of hot electrons at the passivation/barrier interface during commutation. Trapping in this location can explain the measured on-state resistance increase during switching operation and leads to a redistribution of the lateral electric field in the two-dimensional electron gas, which in return modulates the hot electron injection process.

Original language	English
Article number	114208
Journal	Microelectronics Reliability
Volume	126
DOIs	https://doi.org/10.1016/j.microrel.2021.114208
Publication status	Published - Nov 2021

Keywords

Dynamic effects
Gallium nitride
Hard-switching
Hot electrons
Hydrodynamic simulations
Semi-ON

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.microrel.2021.114208

Cite this

@article{7d709dbf551b45538ffb51d44f56219f,

title = "Hot electron effects in AlGaN/GaN HEMTs during hard-switching events",

abstract = "This work contains an investigation of hot-electrons effects in GaN transistors during a hard-switching event by means of wafer-level measurements and TCAD mixed-mode hydrodynamic simulations. The latter reveals the presence of hot electrons at the passivation/barrier interface during commutation. Trapping in this location can explain the measured on-state resistance increase during switching operation and leads to a redistribution of the lateral electric field in the two-dimensional electron gas, which in return modulates the hot electron injection process.",

keywords = "Dynamic effects, Gallium nitride, Hard-switching, Hot electrons, Hydrodynamic simulations, Semi-ON",

author = "Andrea Minetto and Nicola Modolo and Matteo Meneghini and Enrico Zanoni and Luca Sayadi and S{\'e}bastien Sicre and Bernd Deutschmann and Oliver H{\"a}berlen",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier Ltd",

year = "2021",

month = nov,

doi = "10.1016/j.microrel.2021.114208",

language = "English",

volume = "126",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Hot electron effects in AlGaN/GaN HEMTs during hard-switching events

AU - Minetto, Andrea

AU - Modolo, Nicola

AU - Meneghini, Matteo

AU - Zanoni, Enrico

AU - Sayadi, Luca

AU - Sicre, Sébastien

AU - Deutschmann, Bernd

AU - Häberlen, Oliver

PY - 2021/11

Y1 - 2021/11

N2 - This work contains an investigation of hot-electrons effects in GaN transistors during a hard-switching event by means of wafer-level measurements and TCAD mixed-mode hydrodynamic simulations. The latter reveals the presence of hot electrons at the passivation/barrier interface during commutation. Trapping in this location can explain the measured on-state resistance increase during switching operation and leads to a redistribution of the lateral electric field in the two-dimensional electron gas, which in return modulates the hot electron injection process.

AB - This work contains an investigation of hot-electrons effects in GaN transistors during a hard-switching event by means of wafer-level measurements and TCAD mixed-mode hydrodynamic simulations. The latter reveals the presence of hot electrons at the passivation/barrier interface during commutation. Trapping in this location can explain the measured on-state resistance increase during switching operation and leads to a redistribution of the lateral electric field in the two-dimensional electron gas, which in return modulates the hot electron injection process.

KW - Dynamic effects

KW - Gallium nitride

KW - Hard-switching

KW - Hot electrons

KW - Hydrodynamic simulations

KW - Semi-ON

UR - https://www.scopus.com/pages/publications/85120874747

U2 - 10.1016/j.microrel.2021.114208

DO - 10.1016/j.microrel.2021.114208

M3 - Article

AN - SCOPUS:85120874747

SN - 0026-2714

VL - 126

JO - Microelectronics Reliability

JF - Microelectronics Reliability

M1 - 114208

ER -

Hot electron effects in AlGaN/GaN HEMTs during hard-switching events

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this