Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance

Alicja Michalowska-Forsyth; Patrick Schrey; Bernd Deutschmann

doi:10.1007/s00502-018-0648-x

Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance

Institute of Electronics (4390)

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	224-224
Number of pages	1
Journal	Elektrotechnik und Informationstechnik
Volume	136
Issue number	2
DOIs	https://doi.org/10.1007/s00502-018-0648-x
Publication status	Published - Apr 2019

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Information, Communication & Computing

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10.1007/s00502-018-0648-x

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title = "Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance",

author = "Alicja Michalowska-Forsyth and Patrick Schrey and Bernd Deutschmann",

year = "2019",

month = apr,

doi = "10.1007/s00502-018-0648-x",

language = "English",

volume = "136",

pages = "224--224",

journal = "Elektrotechnik und Informationstechnik",

issn = "0932-383X",

publisher = "Springer Verlag Wien",

number = "2",

}

TY - JOUR

T1 - Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance

AU - Michalowska-Forsyth, Alicja

AU - Schrey, Patrick

AU - Deutschmann, Bernd

PY - 2019/4

Y1 - 2019/4

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U2 - 10.1007/s00502-018-0648-x

DO - 10.1007/s00502-018-0648-x

M3 - Comment/debate

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SP - 224

EP - 224

JO - Elektrotechnik und Informationstechnik

JF - Elektrotechnik und Informationstechnik

IS - 2

ER -

Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance

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Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance

Cite this