Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance

Institute of Electronics (4390)

Research output: Contribution to journal › Article › peer-review

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2019

Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance
Michalowska-Forsyth, A., Schrey, P. & Deutschmann, B., Apr 2019, In: Elektrotechnik und Informationstechnik. 136, 2, p. 224-224 1 p.
Research output: Contribution to journal › Comment/debate › peer-review