Common Mode Chokes and GaN Highside-Drivers – Investigating Best Practice EMC Design Guidelines for GaN-based Switching Converters

Research output: Contribution to conferencePosterpeer-review

Abstract

Modern Gallium Nitride (GaN) based switching converters benefit from the device’s high switching speeds which also result in high du/dt transitions. This leads to fast-switching nodes which can often be a source of unwanted electromagnetic interference e.g. caused by common mode currents. Some best-practice design guidelines recommend using common mode chokes for example at the supply pins of isolated high-side supplies or even the gate driver’s input pins.

This poster will summarize possible sources of electromagnetic interference and investigate the effectiveness of recommended mitigation techniques based on practical design examples.
Original languageEnglish
Pages78
Number of pages1
Publication statusPublished - Sept 2025
Event22. EMV Fachtagung 2025 - Seibersdorf Labor GmbH, Seibersdorf , Austria
Duration: 23 Sept 202525 Sept 2025
https://www.seibersdorf-laboratories.at/index.php?id=946&L=0
https://www.seibersdorf-laboratories.at/emv-fachtagung

Conference

Conference22. EMV Fachtagung 2025
Country/TerritoryAustria
CitySeibersdorf
Period23/09/2525/09/25
Internet address

Fields of Expertise

  • Sonstiges

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