Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Varvara Bezhenova; Alicja Malgorzata Michalowska-Forsyth

doi:10.1109/APEMC.2016.7522739

Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Varvara Bezhenova
, Alicja Malgorzata Michalowska-Forsyth

Institut für Elektronik (4390)

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

Abstract

Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

Originalsprache	englisch
Titel	2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC)
Herausgeber (Verlag)	IEEE Publications
Seiten	366-369
Seitenumfang	4
ISBN (elektronisch)	978-1-4673-9494-9
ISBN (Print)	978-1-4673-8310-3
DOIs	https://doi.org/10.1109/APEMC.2016.7522739
Publikationsstatus	Veröffentlicht - 28 Juli 2016

ASJC Scopus subject areas

Elektrotechnik und Elektronik
Sicherheit, Risiko, Zuverlässigkeit und Qualität
Strahlung

Fields of Expertise

Information, Communication & Computing

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10.1109/APEMC.2016.7522739

Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology
Bezhenova, V. & Michalowska-Forsyth, A. M., 28 Juli 2016, S. 366-369. 4 S.
Publikation: Konferenzbeitrag › Poster › Begutachtung

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Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. / Bezhenova, Varvara; Michalowska-Forsyth, Alicja Malgorzata.
2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC). IEEE Publications, 2016. S. 366-369.

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

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title = "Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology",

abstract = "Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.",

keywords = "Logic gates, MOS devices, Transistors, CMOS integrated circuits, ionizing dose effects, RINCE, radiation hard design",

author = "Varvara Bezhenova and Michalowska-Forsyth, \{Alicja Malgorzata\}",

year = "2016",

month = jul,

day = "28",

doi = "10.1109/APEMC.2016.7522739",

language = "English",

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AU - Bezhenova, Varvara

AU - Michalowska-Forsyth, Alicja Malgorzata

PY - 2016/7/28

Y1 - 2016/7/28

N2 - Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

AB - Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

KW - Logic gates

KW - MOS devices

KW - Transistors

KW - CMOS integrated circuits

KW - ionizing dose effects

KW - RINCE

KW - radiation hard design

U2 - 10.1109/APEMC.2016.7522739

DO - 10.1109/APEMC.2016.7522739

M3 - Conference paper

SN - 978-1-4673-8310-3

SP - 366

EP - 369

BT - 2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC)

PB - IEEE Publications

ER -

Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Abstract

ASJC Scopus subject areas

Fields of Expertise

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Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

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