A new method for measuring parasitics of super junction power MOSFETs

Michael Fuchs; Lukas Spielberger; Carsten Sygulla; Bernd Deutschmann

doi:10.23919/EPE.2019.8915539

A new method for measuring parasitics of super junction power MOSFETs

Michael Fuchs
, Lukas Spielberger
, Carsten Sygulla
, Bernd Deutschmann

Institut für Elektronik (4390)

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

Abstract

This document proposes a new methodology to measure the voltage-dependent behavior of parasitic capacitances of super junction power MOSFETs. The measurement technique allows to extract all parasitic elements (capacitances and inductances) with only one measurement while a variable DC voltage is applied between the drain and source pin of the super junction MOSFET. The results can be used to create simulation models of MOSFETs and possibly complete power modules, that accurately represent their high frequency behavior to solve electromagnetic compatibility (EMC) problems in transient simulators, such as LTspice.

Originalsprache	englisch
Titel	2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe
Herausgeber (Verlag)	IEEE
ISBN (elektronisch)	9789075815313
DOIs	https://doi.org/10.23919/EPE.2019.8915539
Publikationsstatus	Veröffentlicht - Sept. 2019
Veranstaltung	21st European Conference on Power Electronics and Applications, ECCE Europe: EPE 2019 - Genova, Italien Dauer: 3 Sept. 2019 → 5 Sept. 2019

Konferenz

Konferenz	21st European Conference on Power Electronics and Applications, ECCE Europe
Land/Gebiet	Italien
Ort	Genova
Zeitraum	3/09/19 → 5/09/19

ASJC Scopus subject areas

Maschinenbau
Elektronische, optische und magnetische Materialien
Steuerung und Optimierung
Energieanlagenbau und Kraftwerkstechnik
Elektrotechnik und Elektronik

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10.23919/EPE.2019.8915539

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Fuchs, M, Spielberger, L, Sygulla, C & Deutschmann, B 2019, A new method for measuring parasitics of super junction power MOSFETs. in 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe., 8915539, IEEE, 21st European Conference on Power Electronics and Applications, ECCE Europe, Genova, Italien, 3/09/19. https://doi.org/10.23919/EPE.2019.8915539

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title = "A new method for measuring parasitics of super junction power MOSFETs",

abstract = "This document proposes a new methodology to measure the voltage-dependent behavior of parasitic capacitances of super junction power MOSFETs. The measurement technique allows to extract all parasitic elements (capacitances and inductances) with only one measurement while a variable DC voltage is applied between the drain and source pin of the super junction MOSFET. The results can be used to create simulation models of MOSFETs and possibly complete power modules, that accurately represent their high frequency behavior to solve electromagnetic compatibility (EMC) problems in transient simulators, such as LTspice.",

keywords = "Capacitance Measurement, EMC, Power MOSFET, S-parameter Meassurement, Spice Model",

author = "Michael Fuchs and Lukas Spielberger and Carsten Sygulla and Bernd Deutschmann",

note = "Publisher Copyright: {\textcopyright} 2019 EPE Association.; 21st European Conference on Power Electronics and Applications, ECCE Europe : EPE 2019 ; Conference date: 03-09-2019 Through 05-09-2019",

year = "2019",

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doi = "10.23919/EPE.2019.8915539",

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AU - Fuchs, Michael

AU - Spielberger, Lukas

AU - Sygulla, Carsten

AU - Deutschmann, Bernd

PY - 2019/9

Y1 - 2019/9

N2 - This document proposes a new methodology to measure the voltage-dependent behavior of parasitic capacitances of super junction power MOSFETs. The measurement technique allows to extract all parasitic elements (capacitances and inductances) with only one measurement while a variable DC voltage is applied between the drain and source pin of the super junction MOSFET. The results can be used to create simulation models of MOSFETs and possibly complete power modules, that accurately represent their high frequency behavior to solve electromagnetic compatibility (EMC) problems in transient simulators, such as LTspice.

AB - This document proposes a new methodology to measure the voltage-dependent behavior of parasitic capacitances of super junction power MOSFETs. The measurement technique allows to extract all parasitic elements (capacitances and inductances) with only one measurement while a variable DC voltage is applied between the drain and source pin of the super junction MOSFET. The results can be used to create simulation models of MOSFETs and possibly complete power modules, that accurately represent their high frequency behavior to solve electromagnetic compatibility (EMC) problems in transient simulators, such as LTspice.

KW - Capacitance Measurement

KW - EMC

KW - Power MOSFET

KW - S-parameter Meassurement

KW - Spice Model

UR - https://www.scopus.com/pages/publications/85076682743

U2 - 10.23919/EPE.2019.8915539

DO - 10.23919/EPE.2019.8915539

M3 - Conference paper

AN - SCOPUS:85076682743

BT - 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe

PB - IEEE

T2 - 21st European Conference on Power Electronics and Applications, ECCE Europe

Y2 - 3 September 2019 through 5 September 2019

ER -

A new method for measuring parasitics of super junction power MOSFETs

Abstract

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ASJC Scopus subject areas

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